1) built-in bias resistors enable the confi guration of an invert er circuit without connecting external input resistors (see equivalent circuit). 2) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on/off conditions need to be set for operation, making device design easy pin connenctions and markin g (1) emitter (2) collector (3) base (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector addreviated symbol: 96 sot-523 addreviated symbol: 96 sot-23-3l sot-23 sot-323 to-92s dta144te dta144tua dta114eca dta144tca dta144tka dta144tsa addreviated symbol: 96 addreviated symbol: 96 lg dta144te/dta144tua/dta144tca dta144tka/dta144tsa digital transistor(pnp) features ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:20170301 -p1
maximum ratings* t a =25 unless otherwise noted limits(dta144t ) symbol parameter e ua ka ca sa units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -100 ma p c collector dissipation 150 200 300 mw tj junction temperature 150 t j , t stg junction and storage temperature -55~+150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol tes t conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 50 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =- 50 a,i c =0 -5 v collector cut-off current i cbo v cb =- 50 v,i e =0 -0.5 ua emitter cut-off current i ebo v eb =- 4 v,i c =0 -0.5 ua dc current gain h fe v ce =- 5 v,i c =- 1 ma 100 300 600 collector-emitter saturation voltage v ce(sat) i c =-5ma,i b =-0.5ma -0.3 v transition frequency f t v ce =- 10 v,i e = 5 ma, f= 100 mhz 250 mhz imput resistor r1 32.9 47 61.1 k typical characteristics LGDTA144TE/dta144tua/dta144tca dta144tka/dta144tsa digital transistor(pnp) / ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:201 70301 -p2
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